Research Group Activities - Electron Devices
In this field, the main topics of interest have concerned the physics and
reliability of sub-micron MOSFETs and Non-Volatile Memories.
In particular, significant work has been done on latch-up, hot carriers transport and
induced transistor degradation, device modeling and characterization.
On the theoretical side, the Group has developed (analitical and numerical)
models and simulators required to understand and interpret the results of
experiments and characterizations.
This work has included pioneering studies of:
- high field transport in MOSFETs (with use of the Monte Carlo technique);
- quantum effects in tunneling MOS structures (requiring the
solution of Poisson's and Schroedinger's equations);
- dynamic electron trapping in silicon dioxide.
As for device characterization, the work done comprises the development
of original techniques such as, for instance, frequency resolved
spectroscopy (used to investigate the energy distribution of hot carriers
in MOSFETs), AC techniques for the extraction of parasitic elements from
I-V characteristics of MOS devices, methods to determine oxide thickness,
transistor parasitic resistances and capacitances and gate depletion
of deep sub-micron MOS structures.
Together with deep submicron MOS transistors, Non-Volatile Memories
(EPROM; EEPROMs and Flash) with all their aspects (performance,
reliability, programming methods, architectures, applications,...) have
represented a major source of research topics in the area of electron