In order to treat correctly short channel and hot-carrier effects in the modern MOS devices the Monte Carlo method offers key advantages, because it does not lump microscopic physics into sometimes process dependent macroscopic transport parameters. In addition, the computation of the carrier distribution function provided by the Monte Carlo method, allows to treat energy threshold phenomena like impact ionization and oxide injection on a solid physical basis.
A general purpose Monte Carlo device simulator (BEBOP) has been developed. It solves self-consistently the Boltzmann transport equation (via Monte Carlo) and Poisson equation. It features several isotropic silicon band models of increasing complexity and main scattering mechanisms, including impact ionization as well as carrier-carrier interaction.
The research activity is focused mainly on three topics:
Developing of physical models for Monte Carlo simulation
A Full Band Monte Carlo program is currently under development