DEIS - University of Bologna
MicroLAB Research Topics
Non-volatile memories physics and reliability characterization
The activity on non-volatile memories is focused to the physical
characterization of single devices as well on the study of the
reliability of single celle as well as full arrays.
Single cells are analized in order to evaluate the electrical
characteristics (as capacitive couplings, injection efficiency etc.)
of cells realized useing different technologies. Among these EEPROMS, EPROM
and Flash EPROM have been studied and models for accurate
simulation of the programming characteristics have been tuned.
To this purpose, in particular, an improved SPICE model taking into
account quantum phenomena taking place into the semiconductor has
been presented and validated by means of measurements performed on
Cells reliability study covers both endurance and
From the memory devices point of view, Flash EPROM arrays are
studied to investigate both topological dependence of the threshold
voltage distribution and erratic bits.
Finally the activity covers application of non-volatile memory cells
as part of an electrically trimmable analog circuit.