DEIS - University of Bologna

MicroLAB Research Topics

MOS Tunnel oxide characterization

The activity in this field covers characterization and modeling of charge injection through thin oxides both at low and high oxide field. The study involves breakdown investigation, low field leakage in very thin oxides and oxide degradation due to static or dynamic stress. To this purpose automatic measurements setup have been tuned to perform accurate measurements of very low current levels. Simulation of charge injection can be accurately performed both at circuit level (using a special version of SPICE simulator) and at phisical level. The activity involves the design and realization of special instruments dedicated to measurements on MOS tunnel capacitors.