DEIS - University of Bologna
MicroLAB Research Topics
MOS Tunnel oxide characterization
The activity in this field covers characterization and modeling
of charge injection through thin oxides both at low and high oxide
The study involves breakdown investigation, low field leakage in
very thin oxides and oxide degradation due to static or dynamic stress.
To this purpose automatic measurements setup have been tuned to
perform accurate measurements of very low current levels.
Simulation of charge injection can be accurately performed both
at circuit level (using a special version of SPICE simulator) and
at phisical level.
The activity involves the design and realization of special instruments
dedicated to measurements on MOS tunnel capacitors.