|Prof. Massimo Lanzoni
DEIS, University of Bologna,
Viale Risorgimento, 2
40136 Bologna - Italy
Phone: (+39) 51 209-3078
Fax: (+39) 51 209-3785
email: massimo.lanzoni at unibo.it
Since then he has been with the Microelectronics Research Group at the Department of Electronics at the same University working on research projects in the fields of the experimental characterization and simulation of NV memory cells and MOS devices, automatic test of VLSI devices.
In particular his scientific interests cover the characterization of
thin dielectrics reliability, non-volatile memory cell characteristics
and reliability, MOS transistors experimental characterization and new
techniques for IC testing as NV memories endurance testing and CMOS IC
latch-up testing, moder instrumentation, advanced sensors and sensor
He is now involved in projects concerning applications of advanced instrumentation and electronic design for industral and biomedical applications.